MIT 6.772 / SMA 5.111 LECTURE #5 20 Feb, 2003 Note Title I. COMMENTS ON QUASI-FERMI LEVELS AND BAND-EDGE GRADIENTS II. 2-DEG'S AND CONDUCTION PARALLEL TO HETERO-INTERFACES III. QUANTUM HETEROSTRUCTURES (part 1) Boston Singapore Note: RECITATION NEXT MON PM (TUE AM) IS FROM 8:30-9:30 PM (9:30-10:30 AM) - N- - SMALL AMOUNT OF DEPLETION CHARGE THIN SHEET OF ELECTRONS AT INTERFACE LIKE AN INVERSION LAYER -Q # Inversion layer This thin sheet of electrons is just like the inversion layer in an MOS structure. band diagram showing energy levels and Fermi levels An FET based on the interface carrier sheet: crosssection of an FET device Metal gate N-AlGaAs P-GaAs Undoped spacer layer High mobility electron gas HEMT Two-dimensional electron gas Modulation doping MODFET TEGFET THESE ARE THE TOPIC OF LEC 12

6.772 Lecture 5 Notes

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