University:
Shippensburg University of Pennsylvania
Course:
PHY 205 | Intermediate Physics I
Academic year:

2022
Views:

8

Pages:

2
Author:

Lemony

Semiconduc Conductors solids solids 10/m² semicond Insulators 1023 s/m² Conductivity (0)=nqu qecharge mobility nommerals hero cond Conden Extrinsic semiconductor Intrinsic (^n=ne) p-type n-type vacancy in valence band choles. n-type & Etrinsic (P) AS, 56) donor impurity e aut majority carrier holes are due to thermal breakdown -re ann free els occupy energy levels closer to conduct. band. ponjunction p-type -Group 13 (B, Al, In) accepter impurity -holes are majority carrier inne wholesare created in the valence band impurity levels above valence bard mobility otholes < es P dep. n depletion region has no charges. ce from nop holes from p n-side near dep becomes + of pside near dep becom - ve • Forward bias Blasing Reverse bias Pregion to treside ngegion to ve side → dep. layer dec. large wirent khee voltage -patenmaal barrier Fside: anode P region 10 ve side n region to the sicke dep layer inc. only leakage 1 vs V avalanche / can breakdown covalent bonds break.. conduct. I nside Castrode directions/uurent forward current: holes of deve to thermal energy Pride reverse current: holes of n-side ideal diode O resistance in forward & co resistance reverse bias. Static resistange dynamit AV ΔΙ PTC ↓ Positive temp. coeft Thermistor NTC ↓ d neg temp- coesf as Temp ↑ resist. ↑ d astemp i rest.d ↓ ↓ reusable frese temp. conpol circuit