University:
Massachusetts Institute of Technology
Course:
6.012 | Microelectronic Devices and Circuits
Academic year:

2019
Views:

427

Pages:

4
Author:

Bianca Gutierrez

MOS Level-1 Model (mos1) Channel Width and Length Threshold Voltage Drain Saturation Voltage Drain Current for the Subthreshold Region Note: These equations apply when VGS-VON 0. You cannot use the subthreshold current equations without nfs. where where IDS,ON is the drain current evaluated at VGS = VON. Drain Current for the Triode Region Note: These equations apply when VGSVON and VDS VDSAT. where Drain Current for the Saturation Region Note: This equation applies when VGSVON and VDSVDSAT. Because the standard SPICE Level-1 model does not include any of the short-channel phenomena, such as mobility modulation and velocitysaturation effects, the uses for this model are limited. To retain high computational efficiency and improve accuracy, the Spectre® circuit simulator incorporates two parameters, theta and vmax, into the Level1 model. The meanings of theta and vmax are the same as those in the Level-3 model. The modified Level-1 model is like a simplified Level-3 model. Spectre uses the modified Level-1 model if theta or vmax (or both) is specified. The drain current equations for the modified Level-1 model are shown in the following section. Drain Saturation Voltage (Modified Level1 Model) where Drain Current for the Triode Region (Modified Level-1 Model) where Drain Current for the Saturation Region (Modified Level-1 Model)